JPH0340513B2 - - Google Patents

Info

Publication number
JPH0340513B2
JPH0340513B2 JP59246308A JP24630884A JPH0340513B2 JP H0340513 B2 JPH0340513 B2 JP H0340513B2 JP 59246308 A JP59246308 A JP 59246308A JP 24630884 A JP24630884 A JP 24630884A JP H0340513 B2 JPH0340513 B2 JP H0340513B2
Authority
JP
Japan
Prior art keywords
island
recrystallized
silicon island
semiconductor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59246308A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61125169A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59246308A priority Critical patent/JPS61125169A/ja
Publication of JPS61125169A publication Critical patent/JPS61125169A/ja
Publication of JPH0340513B2 publication Critical patent/JPH0340513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Recrystallisation Techniques (AREA)
JP59246308A 1984-11-22 1984-11-22 半導体装置の製造方法 Granted JPS61125169A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59246308A JPS61125169A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59246308A JPS61125169A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61125169A JPS61125169A (ja) 1986-06-12
JPH0340513B2 true JPH0340513B2 (en]) 1991-06-19

Family

ID=17146617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59246308A Granted JPS61125169A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61125169A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2730905B2 (ja) * 1988-05-07 1998-03-25 富士通株式会社 半導体装置の製造方法
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114440A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 半導体装置用基板の製造方法

Also Published As

Publication number Publication date
JPS61125169A (ja) 1986-06-12

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term